Samsung Develops First 24GB Random Access Memory

Samsung has announced the development of unprecedented specifications for random access memories in this type of electronic chip.
Samsung explained that the new chips are the first of their kind in the GDDR class with a capacity of 24 gigabytes, designed specifically to meet the needs of data centers and artificial intelligence workstations, with the potential for integration into graphics processors for gaming devices and designer computers in the future.
These chips have a speed of up to 42.5 gigabytes per second, an increase of 25% compared to previous GDDR chips, with a 30% improvement in power consumption as well.
According to Samsung, these chips were manufactured using 5th generation 10-nanometer technology, leading to a 50% increase in cell density compared to GDDR7 chips announced last year.
Samsung is expected to start testing the chips with artificial intelligence systems and graphics processors during the current year, paving the way for an official launch in early 2025.